一个53至84 GHz CMOS功率放大器，输出功率为10.8 dbm，带宽为31 GHz, 3db

2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI:10.1109/MWSYM.2014.6848312

P. Chiang, Wei-Heng Lin, Tzu-Yuan Huang, Huei Wang

{"title":"一个53至84 GHz CMOS功率放大器，输出功率为10.8 dbm，带宽为31 GHz, 3db","authors":"P. Chiang, Wei-Heng Lin, Tzu-Yuan Huang, Huei Wang","doi":"10.1109/MWSYM.2014.6848312","DOIUrl":null,"url":null,"abstract":"A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A 53 to 84 GHz CMOS power amplifier with 10.8-dBm output power and 31 GHz 3-dB bandwidth\",\"authors\":\"P. Chiang, Wei-Heng Lin, Tzu-Yuan Huang, Huei Wang\",\"doi\":\"10.1109/MWSYM.2014.6848312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

采用65nm GP CMOS技术实现53 ~ 84 GHz宽带功率放大器(PA)。该放大器在53 ~ 84 GHz范围内的测量信号增益为29.1±1.5 dB, Psat为10.8 dBm, P1dB为7.2 dBm，漏极电压为1.2 V, 80 GHz时的功率附加效率(PAE)为9.7%。直流功耗为123兆瓦。

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A 53 to 84 GHz CMOS power amplifier with 10.8-dBm output power and 31 GHz 3-dB bandwidth

A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.

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2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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