用蒙特卡罗模拟研究硅纳米晶须生长的细节

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335639

A. Nastovjak, I. Neizvestny, N. Shwartz

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引用次数: 0

摘要

采用蒙特卡罗模拟方法研究了硅纳米晶须的生长。得到了NW生长速率与半径R的关系。发现扩散模式下的生长速率与1/R2成正比，吸附模式下的生长速率与半径无关。

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Investigation of the details of silicon nanowhisker growth by Monte Carlo simulation

Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R2 for diffusion growth mode and radius independent for adsorption mode.

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来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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