高应变锗纳米结构的光电流光谱和x射线微衍射研究

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305919

K. Guilloy, N. Pauc, A. Gassenq, P. Gentile, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. Niquet, V. Calvo, G. O. Dias, D. Rouchon, J. Widiez, J. Hartmann, D. Fowler, A. Chelnokov, V. Reboud, R. Geiger, T. Zabel, H. Sigg, J. Faist

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引用次数: 1

摘要

锗作为硅基电子器件单片集成光子器件的潜在发光材料受到了广泛的研究。事实上，尽管其带隙具有间接性质，但足够的拉伸应变可以产生有效的光发射。本文采用自底向上和自顶向下两种方法对拉伸应变对锗纳米结构直接带隙的影响进行了实验研究[1]。

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Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures

Germanium has been highly investigated as a potential light emitting material for the monolithic integration of photonic devices on silicon-based electronics. Indeed, despite the indirect nature of its bandgap, sufficient tensile strain could yield efficient light emission. We present here an experimental study of the influence of tensile strain on the direct bandgap of germanium nanostructures, using both bottom-up and top-down approaches [1].

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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