Guangyi Lu, Lihui Wang, Ling Wang, Xin Gao, Mei Li
{"title":"先进FinFET技术中超速ESD电源箝位制程致高漏问题的研究","authors":"Guangyi Lu, Lihui Wang, Ling Wang, Xin Gao, Mei Li","doi":"10.23919/IEDS48938.2021.9468849","DOIUrl":null,"url":null,"abstract":"Fabrication-induced high-leakage issue of an overdrive ESD power clamp is presented. With silicon data exhibiting abnormal results, elaborate troubleshooting is performed and disclosed in this paper. Through alignments of silicon data and presumptive simulation results, fabrication-induced root cause is successfully revealed and confirmed by physical failure analysis (PFA) results.","PeriodicalId":174954,"journal":{"name":"2020 International EOS/ESD Symposium on Design and System (IEDS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation on Fabrication-induced High-leakage Issue of an Overdrive ESD Power Clamp in Advanced FinFET Technology\",\"authors\":\"Guangyi Lu, Lihui Wang, Ling Wang, Xin Gao, Mei Li\",\"doi\":\"10.23919/IEDS48938.2021.9468849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fabrication-induced high-leakage issue of an overdrive ESD power clamp is presented. With silicon data exhibiting abnormal results, elaborate troubleshooting is performed and disclosed in this paper. Through alignments of silicon data and presumptive simulation results, fabrication-induced root cause is successfully revealed and confirmed by physical failure analysis (PFA) results.\",\"PeriodicalId\":174954,\"journal\":{\"name\":\"2020 International EOS/ESD Symposium on Design and System (IEDS)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International EOS/ESD Symposium on Design and System (IEDS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IEDS48938.2021.9468849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International EOS/ESD Symposium on Design and System (IEDS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IEDS48938.2021.9468849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation on Fabrication-induced High-leakage Issue of an Overdrive ESD Power Clamp in Advanced FinFET Technology
Fabrication-induced high-leakage issue of an overdrive ESD power clamp is presented. With silicon data exhibiting abnormal results, elaborate troubleshooting is performed and disclosed in this paper. Through alignments of silicon data and presumptive simulation results, fabrication-induced root cause is successfully revealed and confirmed by physical failure analysis (PFA) results.