基于微带线间隙的光控移相器

MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003. Pub Date : 2003-09-10 DOI:10.1109/MWP.2003.1422895

M. El khaldi, F. Podevin, A. Vilcot

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引用次数: 9

摘要

利用高阻硅在843 nm的光吸收特性，设计了一种光控移相器。在非常低的光功率下，在18 GHz-28 GHz频率范围内实现了85/spl度的相移，而幅度几乎保持不变。物理和电磁模型已经被用来解释这些微带结构中的光控微波效应。

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Optically controlled phase-shifter based on gaps on microstrip line

An optically controlled phase-shifter has been designed taking benefit of high resistive silicon photo-absorption at 843 nm. Phase-shift of 85/spl deg/ has been achieved in the frequency range 18 GHz-28 GHz under very low optical power while the magnitude remains practically constant. Physical and electromagnetic modelling has been performed to explain optically controlled microwave effects in these microstrip structures.

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MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.

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