基于0.5µm CMOS工艺的DDSCR器件结构

2020 International EOS/ESD Symposium on Design and System (IEDS) Pub Date : 2021-06-23 DOI:10.23919/IEDS48938.2021.9468852

Xiangliang Jin, Yang Wang

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引用次数: 0

摘要

双向可控硅(DDSCR)主要用于高压环境下的ESD保护。器件测试结果显示，DDSCR的触发电压为17.62V，持续电压为9.54V。最后，通过改变DDSCR的重要尺寸，可以显著改善器件的ESD特性。

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DDSCR Device Structure Fabricated on 0.5 µm CMOS Process

Dual Direction Silicon Controlled Rectifier(DDSCR) are primarily used for ESD protection in high voltage environments. According to the results of the device test, the trigger voltage and the sustain voltage of the DDSCR are 17.62V and 9.54V, respectively. Finally, by changing the important dimensions of the DDSCR, the ESD characteristics of the device can be significantly improved.

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2020 International EOS/ESD Symposium on Design and System (IEDS)

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