一个完全集成的倒装芯片SiGe BiCMOS功率放大器，用于802.11ac应用

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2016-05-22 DOI:10.1109/RFIC.2016.7508314

A. Samelis, E. Whittaker, Michael Ball, A. Bruce, J. Nisbet, L. Lam, C. Christmas, W. Vaillancourt

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引用次数: 2

摘要

提出了一种用于2ghz频段无线局域网(WLAN)应用的全集成倒装SiGe BiCMOS功率放大器。在前端模块(FEM)配置和802.11ac信号激励下，PA在标称工作条件(3.3 V, 25°C)下，在20.6 dBm下提供29 dB小信号增益和-30.4 dB动态误差矢量幅度(EVM)。PA严格控制检测器电压，并校正动态EVM过电源电压、温度、正交频分复用(OFDM)突发长度和占空比变化。

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A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

A fully integrated flip-chip SiGe BiCMOS power amplifier for wireless local area network (WLAN) applications in the 2 GHz band is presented. In a front-end module (FEM) configuration and under 802.11ac signal excitation, the PA delivers 29 dB small-signal gain and -30.4 dB dynamic error vector magnitude (EVM) at 20.6 dBm, at nominal operating conditions (3.3 V, 25 °C). The PA tightly controls detector voltage and corrects the dynamic EVM over supply voltage, temperature, orthogonal frequency division multiplexing (OFDM) burst length and duty cycle variations.

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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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