三种18K FET RAM芯片的双单元动态存储新方法

ESSCIRC 80: 6th European Solid State Circuits Conference Pub Date : 1980-09-01 DOI:10.1109/ESSCIRC.1980.5468764

W. Haug, R. Schnadt

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引用次数: 1

摘要

双单元——一个双端动态双器件FET存储单元——是一个真正对称的感觉系统的基本元素。这种新方法已经成功地应用于三个不同字节宽的18K RAM芯片中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Twin Cell for a New Dynamic Storage Approach in Three 18K FET RAM Chips

The twin cell - a double-ended dynamic two-device FET memory cell - is the basic element for a really symmetrical sense system. This new approach has successfully been used in three different byte wide 18K RAM chips.

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ESSCIRC 80: 6th European Solid State Circuits Conference

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