SiC器件在光伏并网逆变器中的应用

Proceedings of the 2nd International Conference on Artificial Intelligence and Advanced Manufacture Pub Date : 2020-10-15 DOI:10.1145/3421766.3421819

Yongping Li, Ling Li, Hao Wu, Chunyan Jiang, Chaozhang Liu, Shumin Yan, Xinhua Chen, Guodong Feng, Huanyun Zhang

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引用次数: 0

摘要

光伏并网技术的不断发展，对变流器提出了更高的功率密度和效率要求。在这方面，碳化硅(SiC)大功率电力电子器件在光伏逆变器系统中的应用，可以简化系统设计，简化散热装置，减少能量损失，减小系统体积和重量，从而大大降低成本。升压模块是逆变器的关键部件。本文将1200V/20A SiC二极管和SiC mosfet应用于单相光伏并网逆变器升压电路中，使逆变器的整体效率提高了0.5%以上。

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The Application of SiC Devices in Photovoltaic Grid-connected Inverters

The continuous development of photovoltaic grid-connected technology extended the requirement on higher power density and higher efficiency for power converters. In this respect, the application of silicon carbide (SiC) high-power power electronic devices in photovoltaic inverter systems can simplify the system design, simplify the heat dissipation device, reduce energy loss, reduce the volume and weight of the system, and thus greatly reduce the cost. The boost module is a key component of the inverter. In this work, 1200V/20A SiC diodes and SiC MOSFETs are applied to the boost circuit of a single-phase photovoltaic grid-connected inverter, which increases the overall efficiency of the inverter by more than 0.5%.

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Proceedings of the 2nd International Conference on Artificial Intelligence and Advanced Manufacture

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