{"title":"一种原始的无源器件，用于晶圆上噪声参数测量验证","authors":"A. Boudiaf, C. Dubon-Chevallier, D. Pasquet","doi":"10.1109/CPEM.1994.333237","DOIUrl":null,"url":null,"abstract":"Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<<ETX>>","PeriodicalId":388647,"journal":{"name":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An original passive device for on-wafer noise parameter measurement verification\",\"authors\":\"A. Boudiaf, C. Dubon-Chevallier, D. Pasquet\",\"doi\":\"10.1109/CPEM.1994.333237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<<ETX>>\",\"PeriodicalId\":388647,\"journal\":{\"name\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.1994.333237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.1994.333237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An original passive device for on-wafer noise parameter measurement verification
Using a thin film technology, we have designed and fabricated a new passive device for on-wafer noise parameter measurement verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low noise MESFET or HEMT transistors. This new device is ideal as a verification standard, and suited for on-wafer measurements due to its small size and wide operation bandwidth.<>
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