短腔1.55 /spl mu/m DBR激光器集成高速EAM调制器

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382727

C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren

{"title":"短腔1.55 /spl mu/m DBR激光器集成高速EAM调制器","authors":"C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren","doi":"10.1109/ISLC.2004.1382727","DOIUrl":null,"url":null,"abstract":"Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"295 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Short-cavity 1.55 /spl mu/m DBR lasers integrated with high-speed EAM modulators\",\"authors\":\"C. Wang, E. Skogen, J. Raring, G. Morrison, L. Coldren\",\"doi\":\"10.1109/ISLC.2004.1382727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"295 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

利用量子阱混合处理平台，设计并制备了集成EAMs的短腔InGaAsP/InP DBR激光器。实现了高达25 GHz的射频带宽，并在10 Gbit/s的速度下观察到>10 dB的动态消光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Short-cavity 1.55 /spl mu/m DBR lasers integrated with high-speed EAM modulators

Short-cavity InGaAsP/InP DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform. RF bandwidths up to 25 GHz were achieved and open eyes at 10 Gbit/s observed with >10 dB dynamic extinction.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

自引率

0.00%

发文量