具有可编程迟滞的轨对轨CMOS电压比较器

Mustafa Oz, E. Bonizzoni, F. Maloberti, Alper Akdikmen, Jianping Li
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引用次数: 2

摘要

对一种具有可编程迟滞的低偏置电压比较器进行了分析、仿真和介绍。比较器采用了一种新的方法来产生迟滞,其低到高和高到低的过渡阈值水平即使在制造后也可以独立控制。该电路使用NMOS和PMOS前置放大器来完成轨对轨操作。比较器的设计和仿真采用传统的$0.13-\mu\ maththrm {m}$ CMOS工艺,电源电压为3.3 v。蒙特卡罗仿真表明,当迟滞设置为零时,比较器的随机偏移量为$46.3\ \mu\ mathm {V}$,响应时间为137 ns。3.3 v电源的静态电流消耗为$11.2\ \mu\mathrm{A}$。所有的磁滞水平都得到了很好的精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Rail-to-Rail CMOS Voltage Comparator with Programmable Hysteresis
A low offset voltage comparator with programmable hysteresis is analyzed, simulated, and presented. The comparator employs a new method for creating the hysteresis and its low-to-high and high-to-low transition threshold levels can be controlled independently even after fabrication. The circuit uses an NMOS and a PMOS preamplifier to accomplish the rail-to-rail operation. The comparator is designed and simulated in a conventional $0.13-\mu\mathrm{m}$ CMOS process with a 3.3-V supply voltage. Monte Carlo simulations show that the comparator's random offset is $46.3\ \mu\mathrm{V}$ and its response time is 137 ns when the hysteresis is set to zero. The static current consumption is $11.2\ \mu\mathrm{A}$ from a 3.3-V power supply. All the hysteresis levels are obtained with good precision.
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