锥形合金基合成铁磁纳米点的降低矫顽力和开关场

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543295

X. Li, C. Leung, K. Lin, M. Chan, P. Pong

{"title":"锥形合金基合成铁磁纳米点的降低矫顽力和开关场","authors":"X. Li, C. Leung, K. Lin, M. Chan, P. Pong","doi":"10.1109/ISNE.2016.7543295","DOIUrl":null,"url":null,"abstract":"The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots\",\"authors\":\"X. Li, C. Leung, K. Lin, M. Chan, P. Pong\",\"doi\":\"10.1109/ISNE.2016.7543295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

自由层的矫顽力(Hc)和开关场(Hsw)随尺寸的减小而显著增大，从而降低了自旋电子器件的灵敏度。提出了一种基于contic合金的合成铁磁(SyF)三层，在纳米点中表现出比单层更低的Hc和Hsw。对厚度依赖性的研究表明，Hc和Hsw与放大因子呈线性关系。在200℃现场退火后，Hc和Hsw进一步降低。本研究提供了一种降低纳米磁体中Hc和Hsw的方法。

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Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots

The coercivity (H_c) and switching field (H_sw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced H_c and H_sw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of H_c and H_sw on amplification factor. H_c and H_sw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the H_c and H_sw in nanomagnets.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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