多栅极晶体管:将摩尔定律推向极限

J. Colinge
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引用次数: 20

摘要

静电通道控制的改进允许finfet和三极管fet将摩尔定律扩展到15-20nm的栅极长度。进一步的缩放可能需要多栅极器件提供的更好的控制。使用多栅极FET架构,栅极长度分别缩小到5 nm和3 nm,已经在实验和理论上得到了证明。在这些维度上,量子约束开始出现,并且可以观察到漏极电流振荡和穿过软势垒的隧道等新效应。由量子约束产生的场效应晶体管到SET和金属半导体的转变为新型器件提供了机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multigate transistors: Pushing Moore's law to the limit
Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore's law down to gate lengths of 15-20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement begins to appear and new effects such as drain current oscillations and tunneling through soft barriers can be observed. FET to SET and metal-semiconductor transitions resulting from quantum confinement present opportunities for new types of devices.
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