含取向相关表面自由能的4h - sic化学气相沉积海沟填充形貌模拟

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551735

K. Mochizuki, Ji Shiyang, R. Kosugi, Y. Yonezawa, H. Okumura

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引用次数: 0

摘要

化学气相沉积(CVD)沟槽填充的形貌模拟已被提出作为设计高压4H-SiC超结器件制造工艺的工具。在填充条纹沟槽的纵剖面中，实验观察到的倾斜，以前使用固定表面自由能$\gamma$的技术不能很好地再现，通过包含$\gamma$的方向依赖性，可以定性地再现。

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Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy

Topography simulation of chemical-vapordeposition (CVD) trench filling has been advanced as a tool for designing fabrication processes of high-voltage 4H-SiC superjunction devices. In the longitudinal section of filled stripe trenches, an experimentally observed dip, which had not been well reproduced with a previous technique using a fixed surface free energy $\gamma$, came to be qualitatively reproduced by including an orientation dependence of $\gamma$.

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来源期刊

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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