{"title":"半导体远红外光激回旋共振","authors":"T. Ohyama","doi":"10.1109/ICSWA.1981.9335080","DOIUrl":null,"url":null,"abstract":"The far-infrared (84-220 μm) laser cyclotron resonance, impurity-Zeeman absorption and exciton-Zeeman absorption under the intrinsic photoexcitation are described for Ge, Si, InSb and GaAs. Through time-resolved experiments, the optically hot electron state and carrier relaxation as well as recombination mechanism are investigated.","PeriodicalId":254777,"journal":{"name":"1981 International Conference on Submillimeter Waves and Their Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoexcited Cyclotron Resonance in Semiconductors at Far-Infrared\",\"authors\":\"T. Ohyama\",\"doi\":\"10.1109/ICSWA.1981.9335080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The far-infrared (84-220 μm) laser cyclotron resonance, impurity-Zeeman absorption and exciton-Zeeman absorption under the intrinsic photoexcitation are described for Ge, Si, InSb and GaAs. Through time-resolved experiments, the optically hot electron state and carrier relaxation as well as recombination mechanism are investigated.\",\"PeriodicalId\":254777,\"journal\":{\"name\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSWA.1981.9335080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 International Conference on Submillimeter Waves and Their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSWA.1981.9335080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoexcited Cyclotron Resonance in Semiconductors at Far-Infrared
The far-infrared (84-220 μm) laser cyclotron resonance, impurity-Zeeman absorption and exciton-Zeeman absorption under the intrinsic photoexcitation are described for Ge, Si, InSb and GaAs. Through time-resolved experiments, the optically hot electron state and carrier relaxation as well as recombination mechanism are investigated.
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