{"title":"5G宽带多尔蒂功率放大器设计研究","authors":"A. Jarndal, K. Husna Hamza","doi":"10.1109/ICECTA57148.2022.9990305","DOIUrl":null,"url":null,"abstract":"The design and analysis of GaN HEMT Doherty power amplifier (DPA) is done for 5G application. Different methods are investigated for overcoming the bandwidth limiting property of the DPA. The first technique used is the addition of low pass filter at the output terminal of both the carrier and peaking amplifier. The second technique is the addition of shunt short circuit stub each at the output terminal of carrier and peaking amplifier. And the third technique is to add two sections of transmission lines at the output terminal of peaking amplifier. These three circuit configurations were simulated in Keysight Advanced Design System software using the GaN HEMT Cree model CGH40006P as the carrier and peaking amplifiers. The performances were compared with the conventional DPA at 6 GHz frequency. The DPA with the two sections of transmission line at the output of the peaking amplifier exhibited the 3 dB bandwidth of 2 GHz. Besides the results were evaluated considering the state of the art of GaN DPAs for 5G applications.","PeriodicalId":337798,"journal":{"name":"2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Design of Broadband Doherty Power Amplifier for 5G Applications\",\"authors\":\"A. Jarndal, K. Husna Hamza\",\"doi\":\"10.1109/ICECTA57148.2022.9990305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and analysis of GaN HEMT Doherty power amplifier (DPA) is done for 5G application. Different methods are investigated for overcoming the bandwidth limiting property of the DPA. The first technique used is the addition of low pass filter at the output terminal of both the carrier and peaking amplifier. The second technique is the addition of shunt short circuit stub each at the output terminal of carrier and peaking amplifier. And the third technique is to add two sections of transmission lines at the output terminal of peaking amplifier. These three circuit configurations were simulated in Keysight Advanced Design System software using the GaN HEMT Cree model CGH40006P as the carrier and peaking amplifiers. The performances were compared with the conventional DPA at 6 GHz frequency. The DPA with the two sections of transmission line at the output of the peaking amplifier exhibited the 3 dB bandwidth of 2 GHz. Besides the results were evaluated considering the state of the art of GaN DPAs for 5G applications.\",\"PeriodicalId\":337798,\"journal\":{\"name\":\"2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECTA57148.2022.9990305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECTA57148.2022.9990305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the Design of Broadband Doherty Power Amplifier for 5G Applications
The design and analysis of GaN HEMT Doherty power amplifier (DPA) is done for 5G application. Different methods are investigated for overcoming the bandwidth limiting property of the DPA. The first technique used is the addition of low pass filter at the output terminal of both the carrier and peaking amplifier. The second technique is the addition of shunt short circuit stub each at the output terminal of carrier and peaking amplifier. And the third technique is to add two sections of transmission lines at the output terminal of peaking amplifier. These three circuit configurations were simulated in Keysight Advanced Design System software using the GaN HEMT Cree model CGH40006P as the carrier and peaking amplifiers. The performances were compared with the conventional DPA at 6 GHz frequency. The DPA with the two sections of transmission line at the output of the peaking amplifier exhibited the 3 dB bandwidth of 2 GHz. Besides the results were evaluated considering the state of the art of GaN DPAs for 5G applications.