HBT技术在商业和国防应用中的未来趋势

1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest Pub Date : 1997-02-23 DOI:10.1109/MTTTWA.1997.595125

A. Oki, D. Streit, D. Umemoto, L. Tran, K. Kobayashi, F. Yamada, P. Grossman, T. Block, M. Lammert, S. Olson, J. Cowles, M. Hoppe, L. Yang, A. Gutierrez-Aitken, R. Kagiwada, S. Nojima, E. Rezek, W. Pratt, J. Neal, P. Seymour, V. Steel

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引用次数: 4

摘要

自20世纪80年代初以来，异质结双极晶体管(HBT)技术一直处于发展阶段。在20世纪90年代中期，HBT技术已经成熟，为大批量低成本商业无线应用以及高性能国防航空电子、地面和空间应用提供组件。我们讨论了用于国防和商业应用的HBT集成电路技术和生产的现状和未来趋势，包括先进技术的发展，以及与MESFET, HEMT和硅基双极技术的比较。简要介绍了功率放大器和信号合成器。

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Future trends of HBT technology for commercial and defense applications

Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.

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1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest

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