超低功耗,低电压,完全可调,批量控制的凹凸电路

Vassilis Alimisis, Marios Gourdouparis, Christos Dimas, P. Sotiriadis
{"title":"超低功耗,低电压,完全可调,批量控制的凹凸电路","authors":"Vassilis Alimisis, Marios Gourdouparis, Christos Dimas, P. Sotiriadis","doi":"10.1109/MOCAST52088.2021.9493363","DOIUrl":null,"url":null,"abstract":"This work proposes an ultra-low power (6.0nW), low voltage (0.6V), bulk-controlled, 10-transistors bump circuit architecture for Gaussian-function implementation. It can be used as a building block for analog implementation of Gaussian Mixture Model and Kernel Methods. The Gaussians curve width, height and center are independently and electronically adjustable. It consists of a modified current correlator and a bulk-controlled differential block with all transistors operating in sub-threshold. Proper operation, accuracy and robustness are confirmed via simulation and theoretical analysis. It was implemented in TSMC 90nm CMOS process and was simulated using the Cadence IC Suite.","PeriodicalId":146990,"journal":{"name":"2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra-Low Power, Low-Voltage, Fully-Tunable, Bulk-Controlled Bump Circuit\",\"authors\":\"Vassilis Alimisis, Marios Gourdouparis, Christos Dimas, P. Sotiriadis\",\"doi\":\"10.1109/MOCAST52088.2021.9493363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes an ultra-low power (6.0nW), low voltage (0.6V), bulk-controlled, 10-transistors bump circuit architecture for Gaussian-function implementation. It can be used as a building block for analog implementation of Gaussian Mixture Model and Kernel Methods. The Gaussians curve width, height and center are independently and electronically adjustable. It consists of a modified current correlator and a bulk-controlled differential block with all transistors operating in sub-threshold. Proper operation, accuracy and robustness are confirmed via simulation and theoretical analysis. It was implemented in TSMC 90nm CMOS process and was simulated using the Cadence IC Suite.\",\"PeriodicalId\":146990,\"journal\":{\"name\":\"2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MOCAST52088.2021.9493363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MOCAST52088.2021.9493363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本研究提出了一种超低功耗(6.0nW)、低电压(0.6V)、体控、10晶体管碰撞电路架构,用于实现高斯函数。它可以作为高斯混合模型和核方法模拟实现的构建块。高斯曲线的宽度,高度和中心是独立的和电子可调的。它由一个改进的电流相关器和一个块控差分块组成,所有晶体管都工作在亚阈值下。通过仿真和理论分析,验证了该方法的正确性、准确性和鲁棒性。采用台积电90nm CMOS工艺实现,并采用Cadence IC Suite进行仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-Low Power, Low-Voltage, Fully-Tunable, Bulk-Controlled Bump Circuit
This work proposes an ultra-low power (6.0nW), low voltage (0.6V), bulk-controlled, 10-transistors bump circuit architecture for Gaussian-function implementation. It can be used as a building block for analog implementation of Gaussian Mixture Model and Kernel Methods. The Gaussians curve width, height and center are independently and electronically adjustable. It consists of a modified current correlator and a bulk-controlled differential block with all transistors operating in sub-threshold. Proper operation, accuracy and robustness are confirmed via simulation and theoretical analysis. It was implemented in TSMC 90nm CMOS process and was simulated using the Cadence IC Suite.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信