B. Greenwood, J. Kimball, S. Sridaran, K. Truong, A. Lee, S. Menon, J. Gambino, L. Jastrzebski, G. Nadudvari, L. Roszol, M. Nagy, G. Molnár, Z. Kiss, A. Pongrácz, J. Byrnes
{"title":"180nm BCD技术的植入优化","authors":"B. Greenwood, J. Kimball, S. Sridaran, K. Truong, A. Lee, S. Menon, J. Gambino, L. Jastrzebski, G. Nadudvari, L. Roszol, M. Nagy, G. Molnár, Z. Kiss, A. Pongrácz, J. Byrnes","doi":"10.1109/ASMC.2019.8791817","DOIUrl":null,"url":null,"abstract":"A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, followed by observation of photons at longer wavelength generated from radiative recombination; both band to band and defect to band emissions were used. Use of Micro Photoluminescence Imaging allows rapid characterization and corrective actions for dislocations and other defects which suppress PNP beta.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Implant Optimization for a 180nm BCD Technology\",\"authors\":\"B. Greenwood, J. Kimball, S. Sridaran, K. Truong, A. Lee, S. Menon, J. Gambino, L. Jastrzebski, G. Nadudvari, L. Roszol, M. Nagy, G. Molnár, Z. Kiss, A. Pongrácz, J. Byrnes\",\"doi\":\"10.1109/ASMC.2019.8791817\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, followed by observation of photons at longer wavelength generated from radiative recombination; both band to band and defect to band emissions were used. Use of Micro Photoluminescence Imaging allows rapid characterization and corrective actions for dislocations and other defects which suppress PNP beta.\",\"PeriodicalId\":287541,\"journal\":{\"name\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2019.8791817\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791817","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, followed by observation of photons at longer wavelength generated from radiative recombination; both band to band and defect to band emissions were used. Use of Micro Photoluminescence Imaging allows rapid characterization and corrective actions for dislocations and other defects which suppress PNP beta.
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