A Phased Calculation Method of Switching Loss of SiC MOSFET Based on High Power Conditions

As an emerging wide-bandgap semiconductor device, SiC MOSFET provides the advantages of high frequency, high efficiency and high power density for power electronic devices due to its excellent performance. As an important factor to study the switching performance of devices, switching loss is of great significance to its accurate calculation. This paper firstly analyzes the turn-on and turn-off processes of SiC MOSFETs, subdivides them into ten stages, and obtains the calculation method of switching losses in each stage. Then the corresponding switching loss value is obtained through simulation and experiment. Finally, the loss value calculated by the proposed calculation method is compared with the simulation and experiment, which verifies the high accuracy of the loss calculation method.