{"title":"SiOx/Si界面Si纳米金字塔增强富硅SiOx MOSLED的电致发光","authors":"Gong-Ru Lin, Chi-Kuan Lin","doi":"10.1109/GROUP4.2006.1708181","DOIUrl":null,"url":null,"abstract":"Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 10<sup>9</sup> cm<sup>-2</sup> prior to the growth of Si-rich SiO<sub>x</sub>, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED\",\"authors\":\"Gong-Ru Lin, Chi-Kuan Lin\",\"doi\":\"10.1109/GROUP4.2006.1708181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 10<sup>9</sup> cm<sup>-2</sup> prior to the growth of Si-rich SiO<sub>x</sub>, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs\",\"PeriodicalId\":342599,\"journal\":{\"name\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd IEEE International Conference on Group IV Photonics, 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2006.1708181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED
Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 109 cm-2 prior to the growth of Si-rich SiOx, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs
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