超30W的ku波段AlGaN/GaN HEMT

2007 European Microwave Integrated Circuit Conference Pub Date : 2007-12-26 DOI:10.1109/EMICC.2007.4412675

K. Takagi, Y. Kashiwabara, K. Masuda, K. Matsushita, H. Sakurai, K. Onodera, H. Kawasaki, Y. Takada, K. Tsuda

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引用次数: 17

摘要

为ku波段应用开发了AlGaN/GaN高电子迁移率晶体管(hemt)。研究了连续工作条件下的工作电压特性。在VDS = 30 V、连续波工作频率为14.25 GHz、增益压缩水平为3 dB的条件下，采用两个12 mm栅极外围芯片组合的AlGaN/GaN HEMT输出功率超过30 W，功率附加效率(PAE)为12%。

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Ku-band AlGaN/GaN HEMT with over 30W

AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.

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2007 European Microwave Integrated Circuit Conference

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