超导MCM高速互连的激光熔化/喷射和分布In-Sn碰撞设计与制造

Gaowei Xu, W. Gai, L. Luo, Jie Ren
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引用次数: 0

摘要

本文报道了一种用于倒装芯片互连的激光熔化/喷射碰撞技术,该技术将为高速超导MCM(多芯片模块)互连提供一种灵活的解决方案。我们采用In-Sn共晶合金(低熔点约117℃)制作了SCE-MCM倒装碰撞阵列。讨论了激光能量、氮气压力等关键工艺参数对互连强度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-Sn Bumping Design and Fabrication for High Speed Interconnects of Superconducting MCM via Laser Melting/Jetting and Distribution
In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.
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