{"title":"用于三维光子集成的中红外材料和器件","authors":"Jifeng Liu, Haofeng Li, Xiaoxin Wang","doi":"10.1109/PHOSST.2015.7248262","DOIUrl":null,"url":null,"abstract":"We present direct gap, pseudo-single-crystal GeSn on amorphous dielectric layers and flexible substrates for MIR active integrated photonics. The high transient gain and the strain engineering via flexible substrate deformation indicate promising device applications.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GeSn mid-IR materials and devices for 3D photonic integration\",\"authors\":\"Jifeng Liu, Haofeng Li, Xiaoxin Wang\",\"doi\":\"10.1109/PHOSST.2015.7248262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present direct gap, pseudo-single-crystal GeSn on amorphous dielectric layers and flexible substrates for MIR active integrated photonics. The high transient gain and the strain engineering via flexible substrate deformation indicate promising device applications.\",\"PeriodicalId\":349795,\"journal\":{\"name\":\"2015 IEEE Summer Topicals Meeting Series (SUM)\",\"volume\":\"137 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Summer Topicals Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHOSST.2015.7248262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Summer Topicals Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2015.7248262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GeSn mid-IR materials and devices for 3D photonic integration
We present direct gap, pseudo-single-crystal GeSn on amorphous dielectric layers and flexible substrates for MIR active integrated photonics. The high transient gain and the strain engineering via flexible substrate deformation indicate promising device applications.
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