BSIM4.1 50 nm n- pmosfet直流参数提取

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193182

D. Souil, G. Guégan, G. Bertrand, O. Faynot, S. Deleonibs, G. Ghibaudo

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引用次数: 5

摘要

本文首次利用BSIM4.1模型正确模拟了传统50 nm mosfet的直流特性。本文简要介绍了该装置的传统结构，然后描述了参数提取的相关策略。典型的仿真结果表明，该模型可以很好地拟合反向短通道效应和二维电荷共享效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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BSIM4.1 DC parameter extraction on 50 nm n-pMOSFETs

For the first time, DC characteristics of conventional 50 nm MOSFETs have been correctly simulated by a BSIM4.1 model. This paper briefly describes the conventional architecture of the devices, and then the related strategy for parameter extraction is depicted. Typical simulation results are shown, illustrating that reverse short channel and 2D charge sharing effects are well fitted by this compact model.

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来源期刊

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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