铝膜在电迁移试验中的温度测量

InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88 Pub Date : 1988-05-11 DOI:10.1109/ITHERM.1988.28672

H. Jin, G. Gao

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引用次数: 1

摘要

提出了一种新的测量结构和方法，可以在电迁移过程中高精度地测量铝薄膜的温度。在27℃环境温度下，实验结果表明，铝膜的温度和电阻变化可分为三个阶段。第一阶段是由于焦耳加热导致Al膜(T/sub Al/和R/sub Al/)的温度和电阻升高的过程。第二阶段是电迁移过程，其中T/sub Al/和R/sub Al/变化非常缓慢。最后是T/sub Al/和R/sub Al/迅速增加直至断路的灾难性失效过程。

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Temperature measurement in Al films during electromigration test

A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27 degrees C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (T/sub Al/ and R/sub Al/) due to Joule heating. The second stage is an electromigration process in which the T/sub Al/ and R/sub Al/ varied very slowly. The last is the catastrophic failure process in which the T/sub Al/ and R/sub Al/ increase rapidly until open circuit failure.<>

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InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88

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