主动埋模衬底电学特性研究

Hyunho Kim
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引用次数: 1

摘要

本文研究了在衬底内嵌入有源器件的有源芯片嵌入式衬底的电学特性。采用层压工艺、激光在有源器件电极铜垫上打孔、光刻、电解镀铜、蚀刻等化学镀铜形成工艺制备有源埋模衬底样品。采用温度循环(T/C)测试(-55/+125℃,1000循环),通过主动模嵌入衬底的截面和在线测试,评估衬底外部衬垫与嵌入有源器件衬垫之间的互连可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on electrical characteristics for active die embedding substrate
This paper presents study on electrical characteristics of active die embedded substrate that is embedded active devices inside substrate. Active die embedding substrate samples are fabricated using embedding process that consists of lamination process, laser drilling at the electrode Cu pads of active device, electroless Cu plating formation process such as photolithography, electrolytic Cu plating, and etching. Interconnection reliability between external pad of substrate and pad of embedding active devices is evaluated by cross-section and in-circuit test of active die embedding substrate using temperature cycle (T/C) test (-55/+125°C, 1000cycle).
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