{"title":"GaN晶体管1MHz自谐振复位正激变换器的设计","authors":"Yunbo Gu, Tingyu Geng, X. Ren, Zhiliang Zhang, Qianhong Chen","doi":"10.1109/IFEEC.2015.7361385","DOIUrl":null,"url":null,"abstract":"Gallium Nitride (GaN) transistors have advantages in self-resonant reset forward converter (SRFC) at 1MHz for high reliability application. Main design challenges of the converter have been discussed in this paper, especially the selection of resonance parameters. Then, design of a SRFC working with constant frequency at 1MHz is presented in detail. Finally a 20W GaN based prototype is established in laboratory environment and experiment results verified that GaN transistor improvs the performance of the converter with high frequency and small size.","PeriodicalId":268430,"journal":{"name":"2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design of a 1MHz self-resonant reset forward converter with GaN transistor\",\"authors\":\"Yunbo Gu, Tingyu Geng, X. Ren, Zhiliang Zhang, Qianhong Chen\",\"doi\":\"10.1109/IFEEC.2015.7361385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride (GaN) transistors have advantages in self-resonant reset forward converter (SRFC) at 1MHz for high reliability application. Main design challenges of the converter have been discussed in this paper, especially the selection of resonance parameters. Then, design of a SRFC working with constant frequency at 1MHz is presented in detail. Finally a 20W GaN based prototype is established in laboratory environment and experiment results verified that GaN transistor improvs the performance of the converter with high frequency and small size.\",\"PeriodicalId\":268430,\"journal\":{\"name\":\"2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC)\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFEEC.2015.7361385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFEEC.2015.7361385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a 1MHz self-resonant reset forward converter with GaN transistor
Gallium Nitride (GaN) transistors have advantages in self-resonant reset forward converter (SRFC) at 1MHz for high reliability application. Main design challenges of the converter have been discussed in this paper, especially the selection of resonance parameters. Then, design of a SRFC working with constant frequency at 1MHz is presented in detail. Finally a 20W GaN based prototype is established in laboratory environment and experiment results verified that GaN transistor improvs the performance of the converter with high frequency and small size.
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