{"title":"偏置电压对碳纳米管互连磁感的影响","authors":"K. C. Narasimhamurthy, R. Paily","doi":"10.1109/VLSI.Design.2009.21","DOIUrl":null,"url":null,"abstract":"Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Impact of Bias Voltage on Magnetic Inductance of Carbon Nanotube Interconnects\",\"authors\":\"K. C. Narasimhamurthy, R. Paily\",\"doi\":\"10.1109/VLSI.Design.2009.21\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.\",\"PeriodicalId\":267121,\"journal\":{\"name\":\"2009 22nd International Conference on VLSI Design\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 22nd International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.Design.2009.21\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of Bias Voltage on Magnetic Inductance of Carbon Nanotube Interconnects
Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects. This paper discusses the impact of bias voltage variation on magnetic inductance of SWCNT bundle. The variation of bias voltage on inductance was ignored so far. The authors utilize existing models for SWCNT bundle for evaluation. There is a significant variation in inductance value within the available range of bias voltage. This study shows that the inductance change with respect to bias voltages is about 1% to 35% at different lengths of SWCNTs.