{"title":"ESD结构对WLAN 802.11a LNA的影响分析","authors":"Y. Jato, A. Herrera","doi":"10.1109/EMICC.2007.4412686","DOIUrl":null,"url":null,"abstract":"This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"ESD structures impact analysis on a WLAN 802.11a LNA\",\"authors\":\"Y. Jato, A. Herrera\",\"doi\":\"10.1109/EMICC.2007.4412686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.\",\"PeriodicalId\":436391,\"journal\":{\"name\":\"2007 European Microwave Integrated Circuit Conference\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2007.4412686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2007.4412686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ESD structures impact analysis on a WLAN 802.11a LNA
This paper presents a MMIC ESD protected low-noise amplifier manufactured in SiGe:C BiCMOS technology for the IEEE 802.11a/HiperLAN WLAN standard. The LNA operates at 5.2 GHz and achieves a measured gain of 22 dB, a noise figure of 3.3 dB and an output 1 dB compression point of -3 dBm. The amplifier also shows wideband input and output matching The ESD protection circuit has been modeled and the results have been used to study its impact in the performance of the amplifier. The LNA was mounted and measured to test the similarity with simulations.
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