离子注入法生长半绝缘GaAs衬底的器件特性

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722688

M. Yanagisawa, S. Nakajima, T. Sakurada, M. Kiyama, S. Sawada, R. Nakai

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引用次数: 0

摘要

垂直船形法由于位错密度低、残余应变小，在制造大直径砷化镓衬底方面具有优势。本研究证明了在VB GaAs衬底上制备的器件的电学特性。与LEC衬底相比，VB衬底具有相同或更好的性能。我们认为，VB GaAs衬底可望用于大直径离子注入器件工艺。

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Device characterization of semi-insulating GaAs substrate grown by vertical boat method for ion-implantation process

The Vertical Boat (VB) method has an advantage in the manufacture of large diameter GaAs substrates because of the low dislocation density and the small residual strain. The electrical characterization of devices fabricated on VB GaAs substrates have been demonstrated in this work. The VB substrate shows the same or better properties compared with the LEC substrate. We conclude that the VB GaAs substrate is expected to be suitable for the ion-implantation device process with a large diameter.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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