用于大电流、高转换率微处理器的单镜头瞬态抑制器

L. Amoroso, M. Donati, X. Zhou, F. Lee
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引用次数: 74

摘要

下一代微处理器预计将表现出更重的负载和更快的瞬态。传统的稳压模块(VRM)需要大量的输出滤波电容来满足未来的需求,并需要大量的去耦电容,这主要是由于VRM与微处理器之间存在寄生电感。本文提出了一种新的主动阻尼概念。通过在更高的电压下对一些辅助电容器充电,可以在升压瞬态期间存储处理器所需的电量;这些额外的费用可以在本地以单一的方式传递给处理器,绕过较慢的VRM。以同样的方式,该电路可以吸收在降压瞬态期间必须去除的多余电荷。通过使用这种暂态抑制电路,传统的VRM仍然可以提供足够的稳态调节,同时去耦和滤波电容器的尺寸可以显着减小。实验结果证明了该概念的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single shot transient suppressor (SSTS) for high current high slew rate microprocessor
Future generation microprocessors are predicted to exhibit heavier loads and faster transients. Conventional voltage regulator modules (VRM) need a large amount of output filter capacitors to meet future requirements and a huge number of decoupling capacitors, mainly due to the presence of parasitic inductance between the VRM and the microprocessor. In this paper, a new active damp concept is presented. By charging some auxiliary capacitors at higher voltage, it is possible to store the amount of charge required by the processor during the step up transient; this extra charge can be locally delivered to the processor in a single shot manner, bypassing the slower VRM. In the same way, this circuit can sink the excess of charge that has to be removed during the step down transient. By using this transient suppressor circuit, a conventional VRM can still provide adequate steady state regulation, while the size of decoupling and filter capacitors can be significantly reduced. Experimental results prove the validity of the concept.
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