{"title":"毫米波砷化镓冲击二极管","authors":"D. Masse, M. Adlerstein, L. Holway","doi":"10.1109/EUMA.1985.333474","DOIUrl":null,"url":null,"abstract":"Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.","PeriodicalId":177448,"journal":{"name":"1985 15th European Microwave Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Millimeter Wave GaAs IMPATT Diodes\",\"authors\":\"D. Masse, M. Adlerstein, L. Holway\",\"doi\":\"10.1109/EUMA.1985.333474\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.\",\"PeriodicalId\":177448,\"journal\":{\"name\":\"1985 15th European Microwave Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 15th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1985.333474\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 15th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1985.333474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.