毫米波砷化镓冲击二极管

D. Masse, M. Adlerstein, L. Holway
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引用次数: 3

摘要

使用砷化镓(GaAs)双漂移IMPATT二极管的放大器和振荡器已成为取代电子管作为毫米波系统电源的主要固态竞争者之一。在本文中,我们通过器件和电路建模描述了我们实验室获得的最先进的性能。图中显示了在20至94 GHz频率范围内获得的一些结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Millimeter Wave GaAs IMPATT Diodes
Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.
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