面向45nm节点的PECVD多孔SiOCH膜的新型分子结构设计，k=2.3的asic

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345755

Y. Hayashi, F. Itoh, Y. Harada, T. Takeuchi, M. Tada, M. Tagami, H. Ohtake, K. Hijioka, S. Saito, T. Onodera, D. Hara, K. Tokudome

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引用次数: 2

摘要

采用PECVD新概念制备了k=2.3的多孔SiOCH膜，其中涉及孔隙的分子堆积在一起，形成“分子-孔隙堆积，SiOCH (MPS)”膜。通过设计源分子的孔径和位阻侧链来控制膜的孔径和密度。一种新合成的6元环型有机硅氧烷，其侧链为大位阻烃，实现了k=2.3的MPS膜。通过与Cu - damese互连的集成，证实了MPS薄膜的基本可行性。MPS薄膜是45nm节点asic中低k金属间介电材料的有力候选材料。

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Novel molecular-structure design for PECVD porous SiOCH films toward 45nm node, ASICs with k=2.3

A porous SiOCH film with k=2.3 is developed by a new concept PECVD, in which pore-involved molecules are piled up together to deposit a "molecular-pore stacked, SiOCH (MPS)" film. The pore size and the density of the film are controlled by designing the pore size and the steric-hindrance side-chains of the source molecules. A newly synthesized, 6-member ring-type, organo-siloxane with the side-chains of large steric-hindrance hydrocarbons realizes the MPS film with k=2.3. the basic feasibility of the MPS film is confirmed through the integration into Cu damascene interconnects. The MPS film is a strong candidate for the low-k, inter-metal-dielectrics in 45nm node, ASICs.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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