具有GaAs MMIC输出匹配电路的低成本30w级x波段GaN-on-Si MMIC功率放大器

2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI:10.23919/EUMIC.2018.8539903

J. Kamioka, Yoshifumi Kawamura, Y. Tarui, K. Nakahara, Y. Kamo, H. Okazaki, M. Hangai, K. Yamanaka, H. Fukumoto

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引用次数: 2

摘要

本文设计了一种高输出功率、高增益的x波段GaN-on-Si MMIC功率放大器，并设计了GaAs MMIC输出匹配电路，实现了低成本、小型化的模块设计。采用GaAs MMIC输出匹配电路，降低了电路损耗。该放大器在x波段的输出功率为44.8 dBm (30.4 W)，相关增益为29.8 dB, PAE为30%。所开发的放大器在x波段GaN-on-Si放大器中实现了最高的输出功率，增益和PAE。开发的放大器估计成本不到相同尺寸的GaN-on-SiC放大器的一半。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Low-Cost 30-W Class X-Band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit

In this paper, a high output power and high gain X-band GaN-on-Si MMIC power amplifier with a GaAs MMIC output matching circuit is developed to achieve a low-cost and miniaturized module. A GaAs MMIC output matching circuit is employed to reduce circuit loss. Measured performance of the developed amplifier shows output power of 44.8 dBm (30.4 W), associated gain of 29.8 dB and PAE of 30 % in X-band. The developed amplifier achieves the highest output power, gain and PAE among X-band GaN-on-Si amplifiers ever reported. The developed amplifier is estimated to be less than half the cost of GaN-on-SiC amplifiers of the same size.

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

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