{"title":"Co2和Nd:YAG激光等离子体EUVL源激发波长对碎片的影响","authors":"M. D. Fields, S. S. Harilal, A. Hassanein","doi":"10.1109/PLASMA.2011.5993267","DOIUrl":null,"url":null,"abstract":"Current visible and ultraviolet light imprinting methods for manufacturing computer chips have reached their maximum limitations and the extreme ultraviolet (EUV) region has been selected as a possible successor. While extreme ultraviolet lithography (EUVL) offers a solution to advancing Moore's Law, several problems persist pursuant to large-scale industrial and high volume manufacturing. Laser produced plasmas (LPP) from tin targets have been demonstrated to emit EUV radiation (13.5 nm light) with an industrially acceptable conversion efficiency, although debris accumulation on the collector optics is still an issue.1","PeriodicalId":221247,"journal":{"name":"2011 Abstracts IEEE International Conference on Plasma Science","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The role of excitation wavelength on debris for Co2 and Nd:YAG laser-produced plasma EUVL sources\",\"authors\":\"M. D. Fields, S. S. Harilal, A. Hassanein\",\"doi\":\"10.1109/PLASMA.2011.5993267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current visible and ultraviolet light imprinting methods for manufacturing computer chips have reached their maximum limitations and the extreme ultraviolet (EUV) region has been selected as a possible successor. While extreme ultraviolet lithography (EUVL) offers a solution to advancing Moore's Law, several problems persist pursuant to large-scale industrial and high volume manufacturing. Laser produced plasmas (LPP) from tin targets have been demonstrated to emit EUV radiation (13.5 nm light) with an industrially acceptable conversion efficiency, although debris accumulation on the collector optics is still an issue.1\",\"PeriodicalId\":221247,\"journal\":{\"name\":\"2011 Abstracts IEEE International Conference on Plasma Science\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Abstracts IEEE International Conference on Plasma Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PLASMA.2011.5993267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Abstracts IEEE International Conference on Plasma Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2011.5993267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The role of excitation wavelength on debris for Co2 and Nd:YAG laser-produced plasma EUVL sources
Current visible and ultraviolet light imprinting methods for manufacturing computer chips have reached their maximum limitations and the extreme ultraviolet (EUV) region has been selected as a possible successor. While extreme ultraviolet lithography (EUVL) offers a solution to advancing Moore's Law, several problems persist pursuant to large-scale industrial and high volume manufacturing. Laser produced plasmas (LPP) from tin targets have been demonstrated to emit EUV radiation (13.5 nm light) with an industrially acceptable conversion efficiency, although debris accumulation on the collector optics is still an issue.1
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