{"title":"m平面蓝宝石衬底上α-(AlxGa1−x)2O3 (x = 0-100%)的MOCVD外延","authors":"A. Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao","doi":"10.1109/csw55288.2022.9930429","DOIUrl":null,"url":null,"abstract":"Phase pure single crystal α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films are successfully grown on m-plane sapphire substrate via MOCVD. Comprehensive characterization by XRD, RSM mapping, atomic resolution STEM, Raman spectroscopy, SEM, AFM and XPS measurements reveal high quality epitaxial growth of α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films over the entire Al composition range (x=0–100%) and α-GaO/AlGaO superlattice structures with smooth surface morphology, sharp interfaces, and homogenous Al distribution. The bandgap energies of 5.41 eV (x=0) to 8.81 eV (x=1) are extracted from XPS measurements. The determined band offsets reveal a type-I band alignment at the α-AlGaO/GaOinterfaces with valance and conduction band offsets of 0.27 eV and 3.13 eV between α-Ga<inf>2</inf>O<inf>3</inf> and α-Al<inf>2</inf>O<inf>3</inf>, respectively.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate\",\"authors\":\"A. Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao\",\"doi\":\"10.1109/csw55288.2022.9930429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Phase pure single crystal α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films are successfully grown on m-plane sapphire substrate via MOCVD. Comprehensive characterization by XRD, RSM mapping, atomic resolution STEM, Raman spectroscopy, SEM, AFM and XPS measurements reveal high quality epitaxial growth of α-(Al<inf>x</inf>Ga<inf>1−x</inf>)<inf>2</inf>O<inf>3</inf> thin films over the entire Al composition range (x=0–100%) and α-GaO/AlGaO superlattice structures with smooth surface morphology, sharp interfaces, and homogenous Al distribution. The bandgap energies of 5.41 eV (x=0) to 8.81 eV (x=1) are extracted from XPS measurements. The determined band offsets reveal a type-I band alignment at the α-AlGaO/GaOinterfaces with valance and conduction band offsets of 0.27 eV and 3.13 eV between α-Ga<inf>2</inf>O<inf>3</inf> and α-Al<inf>2</inf>O<inf>3</inf>, respectively.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/csw55288.2022.9930429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/csw55288.2022.9930429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
采用MOCVD技术在m平面蓝宝石衬底上成功生长出相纯单晶α-(AlxGa1−x)2O3薄膜。通过XRD, RSM作图，原子分辨率STEM，拉曼光谱，SEM, AFM和XPS测量等综合表征表明，α-(AlxGa1−x)2O3薄膜在整个Al成分范围(x= 0-100%)内具有高质量的外延生长，α- gao /AlGaO超晶格结构具有光滑的表面形貌，尖锐的界面和均匀的Al分布。从XPS测量中提取了5.41 eV (x=0) ~ 8.81 eV (x=1)的带隙能量。α-Ga2O3和α-Al2O3之间的价带和导带偏移量分别为0.27 eV和3.13 eV， α-Al2O3与α-Al2O3界面处的能带偏移量为i型。
MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate
Phase pure single crystal α-(AlxGa1−x)2O3 thin films are successfully grown on m-plane sapphire substrate via MOCVD. Comprehensive characterization by XRD, RSM mapping, atomic resolution STEM, Raman spectroscopy, SEM, AFM and XPS measurements reveal high quality epitaxial growth of α-(AlxGa1−x)2O3 thin films over the entire Al composition range (x=0–100%) and α-GaO/AlGaO superlattice structures with smooth surface morphology, sharp interfaces, and homogenous Al distribution. The bandgap energies of 5.41 eV (x=0) to 8.81 eV (x=1) are extracted from XPS measurements. The determined band offsets reveal a type-I band alignment at the α-AlGaO/GaOinterfaces with valance and conduction band offsets of 0.27 eV and 3.13 eV between α-Ga2O3 and α-Al2O3, respectively.
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