{"title":"底物纯度对介面膜参数的影响","authors":"Bogdan Martynov, E. Pogorelova","doi":"10.1109/CRMICO.2007.4368653","DOIUrl":null,"url":null,"abstract":"Shrinking MESFET dimensions lead to increased displacement of current from active layer into substrate, which produces qualitative changes in the types of dependences between MESFET equivalent circuit parameter and electrode potentials.","PeriodicalId":380403,"journal":{"name":"2007 17th International Crimean Conference - Microwave & Telecommunication Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Influence of Substrate Purity on Mesfet Parameters\",\"authors\":\"Bogdan Martynov, E. Pogorelova\",\"doi\":\"10.1109/CRMICO.2007.4368653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shrinking MESFET dimensions lead to increased displacement of current from active layer into substrate, which produces qualitative changes in the types of dependences between MESFET equivalent circuit parameter and electrode potentials.\",\"PeriodicalId\":380403,\"journal\":{\"name\":\"2007 17th International Crimean Conference - Microwave & Telecommunication Technology\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 17th International Crimean Conference - Microwave & Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2007.4368653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 17th International Crimean Conference - Microwave & Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2007.4368653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of Substrate Purity on Mesfet Parameters
Shrinking MESFET dimensions lead to increased displacement of current from active layer into substrate, which produces qualitative changes in the types of dependences between MESFET equivalent circuit parameter and electrode potentials.