硅-锗HBTs的噪声特性

2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE) Pub Date : 2015-12-01 DOI:10.1109/ICMOCE.2015.7489747

R. K. Nanda, Tara Prasanna Dash, Sanghamitra Das, C. K. Maiti

{"title":"硅-锗HBTs的噪声特性","authors":"R. K. Nanda, Tara Prasanna Dash, Sanghamitra Das, C. K. Maiti","doi":"10.1109/ICMOCE.2015.7489747","DOIUrl":null,"url":null,"abstract":"Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.","PeriodicalId":352568,"journal":{"name":"2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Noise characterization of Silicon-Germanium HBTs\",\"authors\":\"R. K. Nanda, Tara Prasanna Dash, Sanghamitra Das, C. K. Maiti\",\"doi\":\"10.1109/ICMOCE.2015.7489747\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.\",\"PeriodicalId\":352568,\"journal\":{\"name\":\"2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMOCE.2015.7489747\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMOCE.2015.7489747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用耦合过程和器件模拟的方法研究了高频硅锗异质结双极晶体管的微波噪声性能。详细讨论了高尺寸器件尺寸的高级应变工程双极器件中噪声的有害影响。采用基于y参数的技术提取双极晶体管的噪声参数，以解释基极和集电极发射噪声之间的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Noise characterization of Silicon-Germanium HBTs

Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 International Conference on Microwave, Optical and Communication Engineering (ICMOCE)

自引率

0.00%

发文量