集成光学用硅基波导材料

P. Pernas, J. Piqueras, G. Torchia, A. Climent-Font, F. Jaque
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引用次数: 1

摘要

本文介绍了用ECR-PECVD制备Si/SiO/ sub2 //SiON/SiO/ sub2 /波导的结果。为了改变折射率,同时减少与氢有关的损失,我们使用N/ sub2 /作为前驱气体来控制氮氧关系。通过RBS和ERDA分析严格控制样品的组成。本文还介绍了利用红外飞秒激光脉冲在氮化硅材料上制备通道波导的结果。该方法基于先前制造的Si/SiO/sub - 2//SiON/SiO/sub - 2/平面波导,具有低传播损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-based waveguide materials for integrated optics
In this work we present results of Si/SiO/sub 2//SiON/SiO/sub 2/ waveguides fabricated by means of ECR-PECVD. In order to change refraction index and simultaneously to reduce losses related with hydrogen, we have used N/sub 2/ as precursor gas for controlling the nitrogen to oxygen relation. The composition of the samples were carefully controlled by RBS and ERDA analysis. In this paper we also present results of channel waveguides fabricated on silicon oxynitride material by using infrared femtosecond laser pulses. This approach is based on Si/SiO/sub 2//SiON/SiO/sub 2/ planar waveguides previously fabricated and show low propagation losses.
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