P. Afanasyev, A. Grebennikov, R. Farrell, J. Dooley
{"title":"带并联滤波器的e类功率放大器宽带运算","authors":"P. Afanasyev, A. Grebennikov, R. Farrell, J. Dooley","doi":"10.1109/NEWCAS49341.2020.9159806","DOIUrl":null,"url":null,"abstract":"This work proposes a new approach for designing broadband class-E power amplifier (PA) with shunt filter. The approach is based on the double reactance compensation technique. Using this technique reactance variation of loaded Q-factor of a shunt filter and parameters of L-shaped matching circuit are adjusted to minimize variation of load impedance at the device drain across frequency range. Based on this concept, a 10W output power class-E PA was designed, optimized in circuit simulator Keysight ADS and fabricated using GaN HEMT transistor. The manufactured PA has compact output circuit and provides drain efficiency over 65% across frequency range 1.7 - 2.8 GHz and over 60% drain efficiency across frequency range 1.4 - 2.8 Hz. The measured output power variation is 2 dB.","PeriodicalId":135163,"journal":{"name":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Broadband Operation of Class-E Power Amplifier with Shunt Filter\",\"authors\":\"P. Afanasyev, A. Grebennikov, R. Farrell, J. Dooley\",\"doi\":\"10.1109/NEWCAS49341.2020.9159806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes a new approach for designing broadband class-E power amplifier (PA) with shunt filter. The approach is based on the double reactance compensation technique. Using this technique reactance variation of loaded Q-factor of a shunt filter and parameters of L-shaped matching circuit are adjusted to minimize variation of load impedance at the device drain across frequency range. Based on this concept, a 10W output power class-E PA was designed, optimized in circuit simulator Keysight ADS and fabricated using GaN HEMT transistor. The manufactured PA has compact output circuit and provides drain efficiency over 65% across frequency range 1.7 - 2.8 GHz and over 60% drain efficiency across frequency range 1.4 - 2.8 Hz. The measured output power variation is 2 dB.\",\"PeriodicalId\":135163,\"journal\":{\"name\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS49341.2020.9159806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS49341.2020.9159806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband Operation of Class-E Power Amplifier with Shunt Filter
This work proposes a new approach for designing broadband class-E power amplifier (PA) with shunt filter. The approach is based on the double reactance compensation technique. Using this technique reactance variation of loaded Q-factor of a shunt filter and parameters of L-shaped matching circuit are adjusted to minimize variation of load impedance at the device drain across frequency range. Based on this concept, a 10W output power class-E PA was designed, optimized in circuit simulator Keysight ADS and fabricated using GaN HEMT transistor. The manufactured PA has compact output circuit and provides drain efficiency over 65% across frequency range 1.7 - 2.8 GHz and over 60% drain efficiency across frequency range 1.4 - 2.8 Hz. The measured output power variation is 2 dB.