A Parallel Vertical Structure (PVS) used in Highly Integrated GaN-Based Power Modules

Gallium nitride high electron mobility transistors (GaN HEMTs) are widely used in power converters due to their excellent switching speed and small conduction resistance. In many cases, it is necessary to place GaN HEMTs in parallel to increase the current capacity of the module to meet the needs of high-power applications. This paper designs a highly integrated GaN half-bridge power module using parallel vertical structure (PVS). The module uses three GaN HEMTs in parallel respectively in half bridge structure, which has large current capacity and outstanding current sharing effect. The paper comprehensively analyzes the dynamic characteristics and current sharing characteristics of parallel modules, establishes experimental prototypes of double pulse test circuit and buck circuit, and tests the prototypes. The results show that the design has high integration, small module size, low parasitic parameters, and excellent current sharing effect.