DLTS对具有RuO/sub / Schottky触点的4H-SiC二极管的研究

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088497

L. Stuchlíková, L. Harmatha, D. Buc, U. Helmersson, Q. Wahab

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引用次数: 0

摘要

为了研究新型肖特基二极管的电学特性，对具有RuO/ sub2 / Schottky触点的碳化硅(4H-SiC)肖特基二极管进行了深能级瞬态光谱测量。在肖特基二极管上检测到两个电子深能级。它们的热活化能分别为0.56 eV和0.85 eV，指的是电导带。这些深层的起源仍在调查中。

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Investigation of 4H-SiC diode with RuO/sub 2/ Schottky contact by DLTS

Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO/sub 2/ Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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