1.5V, 140µA CMOS超低功耗共门LNA

Chang-Jin Jeong, W. Qu, Yang Sun, Dae-Young Yoon, Sok-Kyun Han, S. Lee
{"title":"1.5V, 140µA CMOS超低功耗共门LNA","authors":"Chang-Jin Jeong, W. Qu, Yang Sun, Dae-Young Yoon, Sok-Kyun Han, S. Lee","doi":"10.1109/RFIC.2011.5940634","DOIUrl":null,"url":null,"abstract":"This paper presents design guidelines for ultra-low power Low Noise Amplifier (LNA) design by comparing input matching, gain, and noise figure (NF) characteristics of common-source (CS) and common-gate (CG) topologies. A current-reused ultra-low power 2.2 GHz CG LNA is proposed and implemented based on 0.18 um CMOS technology. Measurement results show 13.9 dB power gain, 5.14 dB NF, and −9.3 dBm IIP3, respectively, while dissipating 140 uA from a 1.5 V supply, which shows best figure of merit (FOM) among all published ultra-low power LNAs.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 1.5V, 140µA CMOS ultra-low power common-gate LNA\",\"authors\":\"Chang-Jin Jeong, W. Qu, Yang Sun, Dae-Young Yoon, Sok-Kyun Han, S. Lee\",\"doi\":\"10.1109/RFIC.2011.5940634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design guidelines for ultra-low power Low Noise Amplifier (LNA) design by comparing input matching, gain, and noise figure (NF) characteristics of common-source (CS) and common-gate (CG) topologies. A current-reused ultra-low power 2.2 GHz CG LNA is proposed and implemented based on 0.18 um CMOS technology. Measurement results show 13.9 dB power gain, 5.14 dB NF, and −9.3 dBm IIP3, respectively, while dissipating 140 uA from a 1.5 V supply, which shows best figure of merit (FOM) among all published ultra-low power LNAs.\",\"PeriodicalId\":448165,\"journal\":{\"name\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2011.5940634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

本文通过比较共源(CS)和共门(CG)拓扑的输入匹配、增益和噪声系数(NF)特性,提出了超低功耗低噪声放大器(LNA)设计的指导原则。提出并实现了一种基于0.18 um CMOS技术的电流复用超低功耗2.2 GHz CG LNA。测量结果显示,功率增益分别为13.9 dB, NF为5.14 dB, IIP3为- 9.3 dBm,而1.5 V电源的功耗为140 uA,在所有已发布的超低功耗LNAs中显示出最佳的性能因数(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.5V, 140µA CMOS ultra-low power common-gate LNA
This paper presents design guidelines for ultra-low power Low Noise Amplifier (LNA) design by comparing input matching, gain, and noise figure (NF) characteristics of common-source (CS) and common-gate (CG) topologies. A current-reused ultra-low power 2.2 GHz CG LNA is proposed and implemented based on 0.18 um CMOS technology. Measurement results show 13.9 dB power gain, 5.14 dB NF, and −9.3 dBm IIP3, respectively, while dissipating 140 uA from a 1.5 V supply, which shows best figure of merit (FOM) among all published ultra-low power LNAs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信