利用线键技术实现高q电感

Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee
{"title":"利用线键技术实现高q电感","authors":"Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee","doi":"10.1109/APASIC.1999.824149","DOIUrl":null,"url":null,"abstract":"Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Realization of high-Q inductors using wirebonding technology\",\"authors\":\"Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee\",\"doi\":\"10.1109/APASIC.1999.824149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.\",\"PeriodicalId\":346808,\"journal\":{\"name\":\"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APASIC.1999.824149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APASIC.1999.824149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

摘要

为实现低成本、高性能的Si-RFIC,提出了两种采用线键技术的新型高q垂直片上电感。新型电感器的质量因数和自谐振频率均有显著提高。测量到的最大质量因子是平面螺旋电感的3倍左右(3.4 nH为7,5 nH为6)。从这些实验结果来看,键合线电感有望大大提高Si-RFIC的性能和生产成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Realization of high-Q inductors using wirebonding technology
Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信