采用片外封装的5.3 dBi增益300ghz SiGe贴片天线

Sidou Zheng, Si-Yuan Tang, Xiaoyue Xia, Peigen Zhou, Jixin Chen, W. Hong
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引用次数: 1

摘要

本文提出了一种采用片外封装的300ghz片上贴片天线,用于130 nm SiGe BiCMOS的增益增强。本设计采用底部金属Ml和顶部金属TM2分别作为地片和辐射片,以提高带宽和增益。具有蚀刻槽和蚀刻腔的片外金属块被设计为用于天线的封装。设计的封装有助于提高天线增益和稳定辐射方向图。仿真结果表明,采用设计的封装后,天线在300 GHz频段的增益达到5.3 dBi,比自由空间时的增益提高了1.7 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 300 GHz SiGe Patch Antenna With 5.3 dBi Gain Using Off-Chip Package
In this paper, a 300 GHz on-chip patch antenna with an off-chip package for gain enhancement in 130 nm SiGe BiCMOS is proposed. In this design, the bottom metal Ml and the top metal TM2 are employed as the ground and radiating patch respectively to enhance the bandwidth and gain. An offchip metal block with an etched slot and an etched cavity is designed as a package for the antenna. The designed package helps to increase the antenna gain and stabilize the radiation pattern. The simulated results show the antenna has achieved a gain of 5.3 dBi at 300 GHz with the designed package, indicating an increase of1.7 dB compared to the antenna in free space.
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