电路对COMFET™(IGT)动态锁存电流的影响

1986 17th Annual IEEE Power Electronics Specialists Conference Pub Date : 1986-06-23 DOI:10.1109/PESC.1986.7415548

H. R. Ronan, C. Wheatley

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引用次数: 1

摘要

进行终端测量以验证锁存随栅极驱动电阻的变化而变化，并在关断期间发生。dv/dt从1600到300v /us变化，对锁存器没有影响。时间位移关断电流脉冲表明，锁存发生在极低的漏极电压，表明一个定制的栅极驱动。对器件结构的简要讨论解释了这些观察结果。

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Circuit influences on COMFET™ (IGT) dynamic latching current

Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.

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1986 17th Annual IEEE Power Electronics Specialists Conference

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