{"title":"基于定制IPM的电梯逆变系统传导EMI噪声优化设计与最小化","authors":"Su-Eog Cho, F. Kang, Cheul-U. Kim","doi":"10.1109/IECON.2003.1280607","DOIUrl":null,"url":null,"abstract":"This paper deals with the optimal design of an elevator inverter system based on a customised IPM. The proposed approach reduces dv/dt and di/dt resulted in minimization of conducted EMI noise without an additional circuitry. It only optimises the value of gate resistor in the IGBT embedded in the IPM. In order to optimise the customized IPM to an elevator system, we simulated and measured the spike voltage and the motor surge voltage including the temperature variation due to the switching losses at the IPM case and heat-sink. As a result, thanks to the optimised value of the gate resistor to the IPM, the conducted EMI noise is reduced approx. 5/spl sim/10 [dB/spl mu/V] in a particular frequency domain.","PeriodicalId":403239,"journal":{"name":"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimal design and minimization of conducted EMI noise in elevator inverter system by customized IPM\",\"authors\":\"Su-Eog Cho, F. Kang, Cheul-U. Kim\",\"doi\":\"10.1109/IECON.2003.1280607\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the optimal design of an elevator inverter system based on a customised IPM. The proposed approach reduces dv/dt and di/dt resulted in minimization of conducted EMI noise without an additional circuitry. It only optimises the value of gate resistor in the IGBT embedded in the IPM. In order to optimise the customized IPM to an elevator system, we simulated and measured the spike voltage and the motor surge voltage including the temperature variation due to the switching losses at the IPM case and heat-sink. As a result, thanks to the optimised value of the gate resistor to the IPM, the conducted EMI noise is reduced approx. 5/spl sim/10 [dB/spl mu/V] in a particular frequency domain.\",\"PeriodicalId\":403239,\"journal\":{\"name\":\"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IECON.2003.1280607\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.2003.1280607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimal design and minimization of conducted EMI noise in elevator inverter system by customized IPM
This paper deals with the optimal design of an elevator inverter system based on a customised IPM. The proposed approach reduces dv/dt and di/dt resulted in minimization of conducted EMI noise without an additional circuitry. It only optimises the value of gate resistor in the IGBT embedded in the IPM. In order to optimise the customized IPM to an elevator system, we simulated and measured the spike voltage and the motor surge voltage including the temperature variation due to the switching losses at the IPM case and heat-sink. As a result, thanks to the optimised value of the gate resistor to the IPM, the conducted EMI noise is reduced approx. 5/spl sim/10 [dB/spl mu/V] in a particular frequency domain.