RAIL:可预测的,低尾延迟NVMe闪存

Heiner Litz, Javier González, Ana Klimovic, C. Kozyrakis
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引用次数: 12

摘要

基于闪存的存储正在为越来越多的数据中心应用程序取代磁盘,提供更高的吞吐量和更低的平均延迟。然而,应用程序也需要可预测的存储延迟。现有的Flash设备无法在存在写操作的情况下提供低尾读延迟。我们提出了两种解决SSD读尾延迟的新技术,包括独立lun冗余阵列(RAIL),它避免了用户写入后的读序列化,以及延迟感知的热冷分离(HC),它在保持低尾延迟的同时提高了写吞吐量。RAIL利用现代Flash设备的内部并行性,分配数据和奇偶校验页,以避免读卡在写之后。我们将RAIL作为LightNVM Flash转换层的一部分在Linux内核中实现,并表明它可以在99.99%的百分位数上将读尾延迟减少7倍,而相对带宽仅减少33%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RAIL: Predictable, Low Tail Latency for NVMe Flash
Flash-based storage is replacing disk for an increasing number of data center applications, providing orders of magnitude higher throughput and lower average latency. However, applications also require predictable storage latency. Existing Flash devices fail to provide low tail read latency in the presence of write operations. We propose two novel techniques to address SSD read tail latency, including Redundant Array of Independent LUNs (RAIL) which avoids serialization of reads behind user writes as well as latency-aware hot-cold separation (HC) which improves write throughput while maintaining low tail latency. RAIL leverages the internal parallelism of modern Flash devices and allocates data and parity pages to avoid reads getting stuck behind writes. We implement RAIL in the Linux Kernel as part of the LightNVM Flash translation layer and show that it can reduce read tail latency by 7× at the 99.99th percentile, while reducing relative bandwidth by only 33%.
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